Improving electron mobility in MoS<sub>2</sub> field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition-Reference-Cited by-同舟云学术

Improving electron mobility in MoS₂ field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Published:2024 Issue:8 Volume:12 Page:2794-2802
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Cheng Zhaofang¹²,He Shaodan¹,Han Xiaona¹,Zhang Xudong¹,Chen Lina¹,Duan Shijun¹,Zhang Shimin¹,Xia Minggang¹²³^ORCID

Affiliation:

1. Department of Applied Physics, School of Physics, Xi’an Jiaotong University, Shaanxi 710049, People's Republic of China

2. MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi’an Jiaotong University, 710049, People's Republic of China

3. Laboratory of Nanostructure and Physics Properties, Key Laboratory for Quantum Information and Optoelectronic Quantum Devices of Shaanxi Province, School of Physics, Xi’an Jiaotong University, 710049, People's Republic of China

Abstract

A structural phase incorporation strategy was proposed to improve the electron mobility of MoS2 FETs up to 237 cm2 V−1 s−1.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC04605B

Reference56 articles.

1. Graphene and two-dimensional materials for silicon technology

2. 2D transition metal dichalcogenides

3. Synthesis, properties, and optoelectronic applications of two-dimensional MoS2 and MoS2-based heterostructures

4. Recent developments in emerging two-dimensional materials and their applications

5. Single-Layer MoS2 Electronics