Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment-Reference-Cited by-同舟云学术

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Published:2018-05-17 Issue:5 Volume:11 Page:824
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Fan Ching-Lin,Tseng Fan-Ping,Tseng Chiao-Yuan

Funder

National Science Council

National Taiwan University of Science and Technology

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/11/5/824/pdf

Reference29 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

3. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

4. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

5. Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors

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