Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF<sub>4</sub> Plasma Treatment-Reference-Cited by-同舟云学术

Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF₄ Plasma Treatment

Published:2023-04 Issue:4 Volume:70 Page:1687-1691
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Chen¹^ORCID,Peng Cong²^ORCID,Wen Pan²,Xu Meng²,Chen Longlong²^ORCID,Li Xifeng²^ORCID,Zhang Jianhua²^ORCID

Affiliation:

1. School of Materials Science and Engineering and the Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China

2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai, China

Funder

National Natural Science Foundation of China

Shanghai Education Development Foundation

Shanghai Municipal Education Commission

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10050418.pdf?arnumber=10050418

Reference30 articles.

1. Solution-Based Indium–Zinc Oxide/Indium–Gallium–Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide

2. Enhanced Operation of Back-Channel-Etched a-IGZO TFTs by Fluorine Treatment during Source/Drain Wet-Etching

3. Molybdenum etching using an SF6, BCl3 and Ar based recipe for high aspect ratio MEMS device fabrication

4. Origin of light instability in amorphous IGZO thin-film transistors and its suppression

5. Electrical Stability of Solution-Processed a-IGZO TFTs Exposed to High-Humidity Ambient for Long Periods

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