Special Issue: Silicon Nanodevices-Reference-Cited by-同舟云学术

Special Issue: Silicon Nanodevices

Published:2022-06-09 Issue:12 Volume:12 Page:1980
ISSN:2079-4991
Container-title:Nanomaterials
language:en
Short-container-title:Nanomaterials

Author:

Radamson Henry H.,Wang Guilei^ORCID

Abstract

In recent years, nanodevices have attracted a large amount of attention due to their low power consumption and fast operation in electronics and photonics, as well as their high sensitivity in sensor applications [...]

Publisher

MDPI AG

Subject

General Materials Science,General Chemical Engineering

Link

https://www.mdpi.com/2079-4991/12/12/1980/pdf

Reference12 articles.

1. Past, Present and Future of CMOS;Radamson,2018

2. FOI FinFET with ultra-low parasitic resistance enabled by fully metallic source and drain formation on isolated bulk-fin;Zhang;Proceedings of the International Electron Devices Meeting,2016

3. Self-Aligned Fin-On-Oxide (FOO) FinFETs for Improved SCE Immunity and Multi-VTH Operation on Si Substrate

4. Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process

5. High Performance p-i-n Photodetectors on Ge-on-Insulator Platform

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3. Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region;Nanomaterials;2023-02-02

4. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser;Micromachines;2022-09-22