Simulation of Extreme Ultraviolet Radiation and Conversion Efficiency of Lithium Plasma in a Wide Range of Plasma Situations

Author:

Li Xiangdong1ORCID,Rosmej Frank B.23,Chen Zhanbin4ORCID

Affiliation:

1. State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China

2. Faculty of Sciences and Engineering, Sorbonne University, Case 128, Place Jussieu, F-75252 Paris, France

3. Ecole Polytechnique, LULI, Physique Atomique dans les Plasmas Denses, Route de Saclay, F-91128 Palaiseau, France

4. School of Science, Hunan University of Technology, Zhuzhou 412007, China

Abstract

Based on the detailed term accounting approach, the relationship between extreme ultraviolet conversion efficiency and plasma conditions, which range from 5 to 200 eV for plasma temperature and from 4.63 × 1017 to 4.63 × 1022 cm−3 for plasma density, is studied for lithium plasmas through spectral simulations involving very extended atomic configurations, including a benchmark set of autoionizing states. The theoretical limit of the EUV conversion efficiency and its dependence on sustained plasma time are given for different plasma densities. The present study provides the necessary understanding of EUV formation from the perspective of atomic physics and also provides useful knowledge for improving EUV conversion efficiency with different technologies.

Funder

NSFC

invited scientist program of CNRS at Ecole Polytechnique, Palaiseau, France

Publisher

MDPI AG

Reference21 articles.

1. Optical and EUV projection lithography: A computational view;Erdmann;Microelectron. Eng.,2015

2. Potential of discharge-based lithium plasma as an extreme ultraviolet source;Masnavi;Appl. Phys. Lett.,2006

3. Calculation of the extreme-ultraviolet radiation conversion efficiency for a laser-produced tin plasma source;Masnavi;Phys. Open,2019

4. (2024, February 02). The Most Important Company in the Semicondactor Industry with the Full Name Advanced Semiconductor Material Lithography. Available online: https://www.asml.com/en.

5. Modeling of EUV Emission and Conversion Efficiency from Laser-Produced Tin Plasmas for Nanolithography;Harilal;Proc. SPIE,2008

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