Low-Temperature Transient Liquid Phase Bonding Technology via Cu Porous-Sn58Bi Solid–Liquid System under Formic Acid Atmosphere

Author:

He Siliang12,Xiong Bifu1,Xu Fangyi1,Chen Biyang1ORCID,Cui Yinhua2ORCID,Hu Chuan2,Yue Gao13,Shen Yu-An4ORCID

Affiliation:

1. Guangxi Education Department Key Laboratory of Microelectronic Packaging & Assembly Technology, School of Mechanical & Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China

2. Institute of Semiconductors, Guangdong Academy of Sciences, Guangzhou 510650, China

3. Guilin Fuda Co., Ltd., Guilin 541199, China

4. Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan

Abstract

This study proposes a low-temperature transient liquid phase bonding (TLPB) method using Sn58Bi/porous Cu/Sn58Bi to enable efficient power-device packaging at high temperatures. The bonding mechanism is attributed to the rapid reaction between porous Cu and Sn58Bi solder, leading to the formation of intermetallic compounds with high melting point at low temperatures. The present paper investigates the effects of bonding atmosphere, bonding time, and external pressure on the shear strength of metal joints. Under formic acid (FA) atmosphere, Cu6Sn5 forms at the porous Cu foil/Sn58Bi interface, and some of it transforms into Cu3Sn. External pressure significantly reduces the micropores and thickness of the joint interconnection layer, resulting in a ductile fracture failure mode. The metal joint obtained under a pressure of 10 MPa at 250 °C for 5 min exhibits outstanding bonding mechanical performance with a shear strength of 62.2 MPa.

Funder

Guangxi Natural Science Foundation

Science and Technology Planning Project of Guangxi

China Postdoctoral Science Foundation

GDAS’ Project of Science and Technology Development

Guangxi Key Laboratory of Manufacturing System and Advanced Manufacturing Technology

Innovation Project of GUET Graduate Education

National Science and Technology Council of Taiwan

Publisher

MDPI AG

Subject

General Materials Science

Reference49 articles.

1. Analysis on the application, development, and future prospects of Gallium Nitride (GaN);Liu;Proceedings of the 2020 International Conference on Optoelectronic Materials and Devices, Guangzhou, China, 18–20 December 2020,2021

2. Semiconducting polymers: The third generation;Heeger;Chem. Soc. Rev.,2010

3. Development of The Third Generation of Semiconductors with SiC and GaN as The Mainstay;Deng;Highlights Sci. Eng. Technol.,2022

4. A review of high frequency power converters and related technologies;Wang;IEEE Open J. Ind. Electron. Soc.,2020

5. Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: A review;Yadlapalli;Int. J. Energy Res.,2021

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Soft-template-assisted bottom-up fabrication of tunable porosity monolithic copper film for interconnection in microelectronics;Journal of the Taiwan Institute of Chemical Engineers;2023-11

2. Cu-Cu joint with Sn-58Bi/Porous Cu/Sn-58Bi transient liquid phase bonding under formic acid atmosphere;Soldering & Surface Mount Technology;2023-09-13

3. Novel SiC-Based Power Device Bonding Materials of Nano Foam Sheet and Its Characteristic and Properties;IEEE Transactions on Components, Packaging and Manufacturing Technology;2023-06

4. Effect of Cu/Ga interfacial reaction on heat transfer performance;Journal of Materials Science: Materials in Electronics;2023-06

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3