A Novel Copper Microporous-Assisted Bonding Method for Fine-Pitch Cu/Sn Microbump 3D Interconnects
Author:
Affiliation:
1. Purdue University,School of Mechanical Engineering,West Lafayette,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10564841/10564831/10564936.pdf?arnumber=10564936
Reference29 articles.
1. Design Issues and Considerations for Low-Cost 3-D TSV IC Technology
2. Chapter 7: Advanced Packaging and Heterogeneous Integration: Interconnect areal density versus bump pitch;Microelectronics and Advanced Packaging Technologies Roadmap,2023
3. Chapter 8: Single Chip and Multi Chip Integration;Heterogeneous Integration Roadmap 2021 Edition,2021
4. A study on IMC morphology and integration flow for low temperature and high throughput TCB down to 10 mu m pitch microbumps;Derakhshandeh
5. Three-Dimensional Integration: A Tutorial for Designers
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