Electrical Properties in Ta2NiSe5 Film and van der Waals Heterojunction

Abstract

Ternary Ta2NiSe5 is a novel electronic material having the property of an excitonic insulator at room temperature. The electrical properties of Ta2NiSe5 have not been elucidated in detail. We discuss the electronic properties in Ta2NiSe5 films and the formation of heterojunctions. Hall effect measurements showed p-type conductivity. The activation energies estimated from the temperature dependence of the carrier concentration were seen to be 0.17 eV and 0.12 eV, at approximately 300 and 400 K, respectively. It was observed that carrier generation behavior changes at the critical temperature of the excitonic insulator state (328 K). The temperature dependence of the Hall mobility below the critical temperature nearly follows the bell-shaped curves for conventional semiconductor materials. A MoS2/Ta2NiSe5 van der Waals heterojunction was fabricated using the transfer method. Rectification characteristics, which depend on the gate bias voltage, were obtained. The barrier height at the MoS2/Ta2NiSe5 heterointerface and the on/off ratio could be modulated by applying a gate bias voltage, suggesting that the carrier transport was exhibited in band-to-band flow. Our demonstration suggests that the knowledge of Ta2NiSe5 increased as an electronic material, and diode performance was successfully achieved for the electronic device applications.