Comparison of Cobalt Integration with Various Dielectric Materials under Thermal and Electrical Stress

Author:

Cheng Yi-Lung1,Huang Hong-Chang1,Peng Wei-Fan1,Chen Giin-Shan2,Fang Jau-Shiung3ORCID

Affiliation:

1. Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan, R.O.C.

2. Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan, R.O.C.

3. Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan, R.O.C.

Abstract

Cobalt (Co) is proposed to replace copper (Cu) as a conductor in the back-end-of-line (BEOL) interconnects of integrated circuits. In this study, the electric characteristics and reliability of the integration of Co with various dielectric films (SiO2, dense, and porous low-k SiOCH films) under thermal and electrical stress were compared. Thermal annealing repaired sputtering-Co-deposition-induced damage to the dielectric film but reduced the breakdown field and time-dependence-dielectric-breakdown (TDDB) times due to the diffusion of Co atoms. After annealing, the SiO2 film had the largest reductions in the breakdown field, TDDB failure time, and electric field acceleration factor, indicating that the diffusion of Co atoms dominates in the oxygen-rich surface. Under electrical stress, the drift of Co atoms favors the porous low-k film with the assistance of porosity. As a result, a barrier is required for Co metallization. To achieve barrier-free or barrier-less processing in Co metallization, the dense low-k film is the best option to integrate with Co.

Funder

inistry of Science and Technology of the Republic of China, Taiwan

Publisher

MDPI AG

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces

Reference38 articles.

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