Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

Abstract

The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. The film thickness reached 4.5 microns, a relatively high value for MOCVD. The full width at half maxima of the (002) diffraction plane of the film was 26.3 arcsec, thus showing high crystalline quality. The film showed n−-type properties with a doping concentration of 3.6 × 1016 cm−3 and electron mobility of 137 cm2/V·s. In addition, the element composition and stress state of the film were characterized and analyzed. This indicates that the MOCVD, supporting high-quality, high-precision epitaxy, is promising for Ga2O3 power devices.