Affiliation:
1. School of Microeletronics, Dalian University of Technology, Dalian 116024, China
2. Jiangsu Xinguanglian Technology Company Co., Ltd., Wuxi 214192, China
3. The 46th Research Institute of China Electronics Technology Group Corporation, Tianjin 300220, China
Abstract
A high aluminum (Al) content β-(AlxGa1−x)2O3 film was synthesized on c-plane sapphire substrate using the gallium (Ga) diffusion method. The obtained β-(AlxGa1−x)2O3 film had an average thickness of 750 nm and a surface roughness of 2.10 nm. Secondary ion mass spectrometry results indicated the homogenous distribution of Al components in the film. The Al compositions in the β-(AlxGa1−x)2O3 film, as estimated by X-ray diffraction, were close to those estimated by X-ray photoelectron spectroscopy, at ~62% and ~61.5%, respectively. The bandgap of the β-(AlxGa1−x)2O3 film, extracted from the O 1s core-level spectra, was approximately 6.0 ± 0.1 eV. After synthesizing the β-(AlxGa1−x)2O3 film, a thick β-Ga2O3 film was further deposited on sapphire substrate using carbothermal reduction and halide vapor phase epitaxy. The β-Ga2O3 thick film, grown on a sapphire substrate with a β-(AlxGa1−x)2O3 buffer layer, exhibited improved crystal orientation along the (-201) plane. Moreover, the scanning electron microscopy revealed that the surface quality of the β-Ga2O3 thick film on sapphire substrate with a β-(AlxGa1−x)2O3 intermediate buffer layer was significantly improved, with an obvious transition from grain island-like morphology to 2D continuous growth, and a reduction in surface roughness to less than 10 nm.
Funder
The National Natural Science Foundation of China
The Fundamental Research Funds for the Central Universities
The Natural Science Foundation of Liaoning Province
Subject
General Materials Science
Cited by
1 articles.
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