Abstract
With the increase in renewable energy generation, microgrid has put forward higher requirements on the power density and performance of the photovoltaic inverter. In this paper, the dynamic process of inverter based on the cascode Gallium nitride (GaN) high electron mobility transistor (HEMT) for the photovoltaic (PV) application is analyzed in detail. The parasitic inductors and capacitors have been considered in our proposed equivalent model, which can explain the phenomenon that the crossover time of the voltage and current is prolonged by the parasitic parameters. The influence of the parasitic parameters is identified through theoretical analysis. By analyzing the influence of parasitic parameters, the design process of high-frequency inverter can be optimized. A 500 W inverter based on the cascode GaN HEMT is built, and the correctness of theoretical and simulation analysis is verified by the experimental results.
Funder
National Natural Science Foundation of China
the Natural Science Foundation of Beijing
Subject
Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous),Building and Construction
Reference38 articles.
1. Frequency Response of PV Inverters Toward High Renewable Penetrated Distribution Networks;Bai;CSEE J. Power Energy Syst.,2022
2. Review of system strength and inertia requirements for the national electricity market of Australia;Gu;CSEE J. Power Energy Syst.,2019
3. Single-Phase Single-Stage Transformer less Grid-Connected PV System
4. Recent advances in single‐phase transformerless photovoltaic inverters
5. Comparison and Analysis of Single-Phase Transformerless Grid-Connected PV Inverters
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献