Abstract
High-precision aligned wafer bonding is essential to heterogeneous integration, with the device dimension reduced continuously. To get the alignment more accurately and conveniently, we propose a moiré-based alignment method using centrosymmetric grating marks. This method enables both coarse and fine alignment steps without requiring additional conventional cross-and-box alignment marks. Combined with an aligned wafer bonding system, alignment accuracy better than 300 nm (3σ) was achieved after bonding. Furthermore, the working principle of the moiré-based alignment for the backside alignment system was proposed to overcome the difficulty in bonding of opaque wafers. We believe this higher alignment accuracy is feasible to satisfy more demanding requirements in wafer-level stacking technologies.
Funder
National Natural Science Foundation of China
Fundamental Research Funds for Central Universities
China Postdoctoral Science Foundation
Heilongjiang Provincial Postdoctoral Science Foundation
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
Cited by
5 articles.
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