Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering
Reference21 articles.
1. Thin-film GaN Schottky diodes formed by epitaxial lift-off
2. Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3MBE
3. Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
4. Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching
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