Complex Assessment of X-ray Diffraction in Crystals with Face-Centered Silicon Carbide Lattice

Abstract

X-ray diffraction analysis is essential in studying stacking faults. Most of the techniques used for this purpose are based on theoretical studies. These studies suggest that the observed diffraction patterns are caused by random stacking faults in crystals. In reality, however, the condition of randomness for stacking faults may be violated. The purpose of the study was to develop a technique that can be used to calculate the diffraction effects of the axis of the thin plates of twin, new phases, as well as other variations in defective structures. Materials and methods. This was achieved through modern X-ray diffraction methods using differential equations (transformations and Fourier transforms) and the construction of the Ewald sphere, mathematical analysis, mathematical logic, and mathematical modeling (complex Markov chain). Conclusion. The study made it possible to develop a technique for the calculation of the diffraction effects of the axis of the thin plates of twin, new phases and other variations in defective structures. The technique makes it possible to solve several complex, urgent problems related to the calculation of X-ray diffraction for crystals with face-centered lattices containing different types of stacking faults. At the same time, special attention was paid to the correlations between the relative positions of faults. The calculations showed that the proposed method can help to determine the nature and structure of stacking faults by identifying the partial and vertex dislocations limiting them in twin crystals with a face-centered cubic structure of silicon carbide based on X-ray diffraction analysis.