Abstract
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.
Funder
Canadian Network for Research and Innovation in Machining Technology, Natural Sciences and Engineering Research Council of Canada
GaNSystems
Subject
Energy (miscellaneous),Energy Engineering and Power Technology,Renewable Energy, Sustainability and the Environment,Electrical and Electronic Engineering,Control and Optimization,Engineering (miscellaneous)
Cited by
5 articles.
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