Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al0.45 Ga0.55 N barrier layer-Reference-Cited by-同舟云学术

Normally-off AlGaN/GaN MOS-HEMT using ultra-thin Al0.45 Ga0.55 N barrier layer

Published:2017-05-15 Issue:8 Volume:214 Page:1600836
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chakroun Ahmed¹,Jaouad Abdelatif¹,Bouchilaoun Meriem¹,Arenas Osvaldo¹,Soltani Ali¹,Maher Hassan¹

Affiliation:

1. Laboratoire Nanotechnologies Nanosystèmes (LN2) − CNRS UMI-3463 − Institut Interdisciplinaire d'Innovation Technologique (3IT); Université de Sherbrooke; 3000 Boulevard de l'université Sherbrooke QC J1 K OA5 Canada

Funder

LN2 is a joint International Research Laboratory (Unité Mixte Internationale UMI 3463)

Centre National de la Recherche Scientifique

Université de Sherbrooke

INSA Lyon, ECL, CPE, Université Grenoble Alpes (UGA)

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

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2. High-performance normally-off Al2O3/GaN MOSFET using a wet etching-based gate recess technique;Wang;IEEE Electron Device Lett,2013

3. 300 °C operation of normally-off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio;Xu;Electron. Lett,2014

4. AlGaN/GaN recessed MIS-Gate HFET with high-threshold-voltage normally-off operation for power electronics applications;Oka;IEEE Electron Device Lett,2008

5. Threshold voltage instability in Al2O3/GaN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors;Huang;Jpn. J. Appl. Phys,2011

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