Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate-Reference-Cited by-同舟云学术

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Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Published:2015-06-18 Issue:2 Volume:2 Page:646-658
ISSN:2304-6732
Container-title:Photonics
language:en
Short-container-title:Photonics

Author:

Chen Siming,Tang Mingchu,Wu Jiang,Jiang Qi,Dorogan Vitaliy,Benamara Mourad,Mazur Yuriy,Salamo Gregory,Liu Huiyun

Publisher

MDPI AG

Subject

Radiology, Nuclear Medicine and imaging,Instrumentation,Atomic and Molecular Physics, and Optics

Link

http://www.mdpi.com/2304-6732/2/2/646/pdf

Reference34 articles.

1. Recent progress in lasers on silicon;Liang;Nat. Photonics,2010

2. Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates;Lee;Appl. Phys. Lett.,1987

3. Optical properties of GaAs on (100) Si using molecular beam epitaxy

4. Metal‐semiconductor field‐effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy

5. 13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Continuous-wave operation of Si-based 1.31 μm InAs/GaAs quantum-dot laser grown by molecular beam epitaxy;Physica Scripta;2023-07-21

2. Impact of Built‐In Electric Field on the Emission Characteristics of InAs/GaAs Quantum Dot Laser Structure;physica status solidi (b);2021-05-20

3. GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications;Post-Transition Metals;2021-04-14

4. Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes;Nanomaterials;2020-04-11

5. O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate;Applied Sciences;2019-01-23

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