Polishing Performance and Removal Mechanism of Core-Shell Structured Diamond/SiO2 Abrasives on Sapphire Wafer

Abstract

Corrosive and toxic solutions are normally employed to polish sapphire wafers, which easily cause environmental pollution. Applying green polishing techniques to obtain an ultrasmooth sapphire surface that is scratch-free and has low damage at high polishing efficiency is a great challenge. In this paper, novel diamond/SiO2 composite abrasives were successfully synthesized by a simplified sol-gel strategy. The prepared composite abrasives were used in the semi-fixed polishing technology of sapphire wafers, where the polishing slurry contains only deionized water and no other chemicals during the whole polishing process, effectively avoiding environmental pollution. The experimental results showed that diamond/SiO2 composite abrasives exhibited excellent polishing performance, along with a 27.2% decrease in surface roughness, and the material removal rate was increased by more than 8.8% compared with pure diamond. Furthermore, through characterizations of polished sapphire surfaces and wear debris, the chemical action mechanism of composite abrasives was investigated, which confirmed the solid-state reaction between the SiO2 shell and the sapphire surface. Finally, applying the elastic-plastic contact model revealed that the reduction of indentation depth and the synergistic effect of chemical corrosion and mechanical removal are the keys to improving polishing performance.