Affiliation:
1. School of Microelectronics, Shanghai University, Shanghai 201800, China
Abstract
With the continuous shrinkage of integrated circuit (IC) dimensions, traditional copper interconnect technology is gradually unable to meet the requirements for performance improvement. Carbon nanotubes have gained widespread attention and research as a potential alternative to copper, due to their excellent electrical and mechanical properties. Among various methods for producing carbon nanotubes, chemical vapor deposition (CVD) has the advantages of mild reaction conditions, low cost, and simple reaction operations, making it the most promising approach to achieve compatibility with integrated circuit manufacturing processes. Combined with through silicon via (TSV), direct application of CVD-grown carbon nanotubes in IC interconnects can be achieved. In this article, based on the above background, we focus on discussing some of the main challenges and developments in the application of CVD-grown carbon nanotubes in IC interconnects, including low-temperature CVD, metallicity enrichment, and contact resistance.
Funder
National Natural Science Foundation of China
Subject
General Materials Science,General Chemical Engineering
Reference95 articles.
1. Damascene copper electroplating for chip interconnections;Andricacos;IBM J. Res. Dev.,1998
2. Brain, R. (2016, January 3–7). Interconnect scaling: Challenges and opportunities. Proceedings of the 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA.
3. Xu, B., Chen, R., Zhou, J., and Liang, J. (2022). Recent progress and challenges regarding carbon nanotube on-chip interconnects. Micromachines, 13.
4. Electromigration in submicron interconnect features of integrated circuits;Ceric;Mater. Sci. Eng. R Rep.,2011
5. Basu, N., Lin, H.-Y., Chen, T.-W., Chan, Y.-C., Tsai, Y.-T., Guo, H.-C., Wu, T.-H., Lin, P.-C., Lin, Y.-C., and Liao, M.-H. (June, January 30). The Advantages of Low temperature (<400 °C) Carbon Nano-Tubes (CNTs) as through Silicon Vias (TSVs) in Multi-Layer Stacking and Backside Power-Via Application. Proceedings of the IEEE 73rd Electronic Components and Technology Conference (ECTC), Orlando, FL, USA.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献