Recent Progress in Computational Materials Science for Semiconductor Epitaxial Growth
Author:
Publisher
MDPI AG
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2073-4352/7/2/46/pdf
Reference131 articles.
1. Reconstruction and defect structure of vicinal GaAs(001) and AlxGa1−xAs(001) surfaces during MBE growth
2. Ab initiotheory of polar semiconductor surfaces. I. Methodology and the (22) reconstructions of GaAs(111)
3. Stoichiometry and Surface Reconstruction: AnAb InitioStudy of GaAs(100) Surfaces
4. Structure of Si(100)H: Dependence on the H chemical potential
5. A new theoretical approach to adsorption–desorption behavior of Ga on GaAs surfaces
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