High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes-Reference-Cited by-同舟云学术

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High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Published:2018-06-30 Issue:7 Volume:11 Page:1119
ISSN:1996-1944
Container-title:Materials
language:en
Short-container-title:Materials

Author:

Cheng Tin,Summerfield Alex,Mellor Christopher,Khlobystov Andrei,Eaves Laurence,Foxon C.,Beton Peter,Novikov Sergei

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

Publisher

MDPI AG

Subject

General Materials Science

Link

http://www.mdpi.com/1996-1944/11/7/1119/pdf

Reference42 articles.

1. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

2. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

3. Epitaxial growth of single-domain graphene on hexagonal boron nitride

4. Hexagonal boron nitride for deep ultraviolet photonic devices

5. Review—Hexagonal Boron Nitride Epilayers: Growth, Optical Properties and Device Applications

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2. Spatially-resolved UV-C emission in epitaxial monolayer boron nitride;2D Materials;2024-03-13

3. Pressure-dependent mode Grüneisen parameters and their impact on thermal expansion coefficient of zinc-blende InN;Journal of Materials Science;2023-05

4. Scalable synthesis of 2D materials;2D Materials for Electronics, Sensors and Devices;2023

5. Synthesis of antiferromagnetic Weyl semimetal Mn₃Ge on insulating substrates by electron beam assisted molecular beam epitaxy;APL Materials;2022-10-01

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