Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures-Reference-Cited by-同舟云学术

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Published:2023-05-11 Issue:10 Volume:12 Page:2194
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Shu Lei¹²³^ORCID,Liao Huai-Lin¹,Wu Zi-Yuan⁴,Fang Xing-Yu²³,Liang Shi-Wei⁴,Li Tong-De²³,Wang Liang²³,Wang Jun⁴,Zhao Yuan-Fu²³

Affiliation:

1. School of Integrated Circuit, Peking University, Beijing 100871, China

2. Beijing Microelectronics Technology Institute, Beijing 100076, China

3. Laboratory of Science and Technology on Radiation Hardened Integrated Circuits, China Aerospace Science and Technology Corporation (CASC) Fengtai, Beijing 100076, China

4. College of Electrical and Information Engineering, Hunan University, Changsha 410082, China

Abstract

The switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices of different structures were experimented after exposure to a gamma irradiation environment. The experimental results for on-state were studied. The comparisons are shown for SiC MOSFET power devices with planar, trench and double trench structures tested for total ionizing dose (TID). A higher degradation of the switching characteristics was observed for the double trench structure. The physical mechanisms for these switching characteristics variations were analyzed. In addition, they were confirmed by technology computer-aided design (TCAD) simulation.

Funder

National Natural Science Foundation of China

science and technology innovation Program of Hunan Province

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/12/10/2194/pdf

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