LazyRS: Improving the Performance and Reliability of High-Capacity TLC/QLC Flash-Based Storage Systems Using Lazy Reprogramming-Reference-Cited by-同舟云学术

LazyRS: Improving the Performance and Reliability of High-Capacity TLC/QLC Flash-Based Storage Systems Using Lazy Reprogramming

Published:2023-02-07 Issue:4 Volume:12 Page:843
ISSN:2079-9292
Container-title:Electronics
language:en
Short-container-title:Electronics

Author:

Kim Beomjun¹^ORCID,Kim Myungsuk¹^ORCID

Affiliation:

1. School of Computer Science and Engineering, Kyungpook National University, Daegu 37224, Republic of Korea

Abstract

We propose a new NAND programming scheme called the lazy reprogramming scheme (LazyRS) which divides a program operation into two stages, where the second stage is delayed until it is needed. LazyRS optimizes the program latency by skipping the second stage if it is not required. An idle interval before the second stage improves the flash reliability as well. To maximize the benefit of LazyRS, a LazyRS-aware FTL adjusts the length of an idle interval dynamically over changing workload characteristics. The experimental results show that the LazyRS-aware FTL can efficiently improve the write throughput and reliability of flash-based storage systems by up to 2.6 times and 31.2%, respectively.

Funder

National Research Foundation of Korea

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

Link

https://www.mdpi.com/2079-9292/12/4/843/pdf

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