Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures

Author:

Knura Rafał1,Skibińska Katarzyna1,Sahayaraj Sylvester1,Marciszko-Wiąckowska Marianna2ORCID,Gwizdak Jakub3,Wojnicki Marek13ORCID,Żabiński Piotr3ORCID,Sapeta Grzegorz1,Iwanek Sylwester1ORCID,Socha Robert P.1ORCID

Affiliation:

1. CBRTP SA Research and Development Center of Technology for Industry, Ludwika Waryńskiego 3A, 00-645 Warszawa, Poland

2. Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Kraków, Poland

3. Faculty of Non-Ferrous Metals, AGH University of Krakow, Al. Mickiewicza 30, 30-059 Kraków, Poland

Abstract

The aim of this study was to determine the electronic properties of as-deposited ALD-grown Ge-doped zinc oxide thin films annealed at 523 K or 673 K. SEM, EDS, and ellipsometry measurements confirmed that the Ge-doped zinc oxide films with a thickness of around 100 nm and uniform composition were successfully obtained. GI-XRD measurements did not reveal phases other than the expected Wurtzite structure of the ZnO. The electronic properties, i.e., conductivity, charge carrier concentration, and mobility of the films, were evaluated using Hall effect measurements and explained based on corresponding XPS measurements. This work supports the theory that oxygen vacancies act as electron donors and contribute to the intrinsic n-type conductivity of ZnO. Also, it is shown that the effect of oxygen vacancies on the electronic properties of the material is stronger than the effect introduced by Ge doping.

Funder

National Center for Research and Development

Publisher

MDPI AG

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