Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region-Reference-Cited by-同舟云学术

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Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

Published:2006-10 Issue:24 Volume:252 Page:8482-8486
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zheng Tianhang,Li Ziquan,Chen Jiankang,Shen Kai,Sun Kefei

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. Enhancement of band-edge photoluminescence of bulk ZnO single crystals coated with alkali halide

2. Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films

3. Recent progress in processing and properties of ZnO

4. Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes

5. Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods

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1. Evaluation of the Electronic Properties of Atomic Layer Deposition-Grown Ge-Doped Zinc Oxide Thin Films at Elevated Temperatures;Electronics;2024-01-30

2. Wide spectrum solar energy absorption based on germanium plated ZnO nanorod arrays: Energy band regulation, Finite element simulation, Super hydrophilicity, Photothermal conversion;Applied Materials Today;2022-08

3. Formation and functionalization of Ge-nanoparticles in ZnO;Nanotechnology;2021-09-29

4. Ge-doped ZnO nanorods grown on FTO for photoelectrochemical water splitting with exceptional photoconversion efficiency;International Journal of Hydrogen Energy;2021-01

5. Zn2GeO4/SnO2 Nanowire Heterostructures Driven by Plateau–Rayleigh Instability;Crystal Growth & Design;2019-11-15

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