Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes-Reference-Cited by-同舟云学术

Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Published:2018-06-20 Issue:6 Volume:8 Page:258
ISSN:2073-4352
Container-title:Crystals
language:en
Short-container-title:Crystals

Author:

Fang Mengqian,Tian Kangkai,Chu Chunshuang,Zhang Yonghui,Zhang Zi-Hui,Bi Wengang^ORCID

Funder

National Natural Science Foundation of China

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Link

http://www.mdpi.com/2073-4352/8/6/258/pdf

Reference23 articles.

1. A Brief Review of III-Nitride UV Emitter Technologies and Their Application;Kneissl,2015

2. Efficiency enhancement in AlGaN deep ultraviolet light-emitting diodes by adjusting Mg doped staggered barriers

3. Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

4. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

5. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

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