Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering-Reference-Cited by-同舟云学术

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Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering

Published:2014-04-14 Issue:8 Volume:39 Page:2483
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Zhang Zi-Hui,Ju Zhengang,Liu Wei,Tan Swee Tiam,Ji Yun,Kyaw Zabu,Zhang Xueliang,Hasanov Namig,Sun Xiao Wei,Demir Hilmi Volkan

Funder

National Research Foundation of Singapore

Singapore Agency for Science, Technology and Research

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference15 articles.

1. Advances in the LED Materials and Architectures for Energy-Saving Solid-State Lighting Toward “Lighting Revolution”

2. PN-type quantum barrier for InGaN/GaN light emitting diodes

3. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

4. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

5. Origin of InGaN light-emitting diode efficiency improvements using chirped AlGaN multi-quantum barriers

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2. AlGaN-Based DUV LEDs With Al-Composition-Engineered AlGaN Superlattice Inserted at the p-EBL/Hole Supplier Interface;IEEE Transactions on Electron Devices;2024-06

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4. Lower current density driven InGaN/GaN micro-LED with improved quantum efficiency;Optik;2024-04

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