具有单调组分渐变空穴存储层和对称组分渐变空穴阻挡层的深紫外激光二极管性能优化-Reference-Cited by-同舟云学术

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具有单调组分渐变空穴存储层和对称组分渐变空穴阻挡层的深紫外激光二极管性能优化

Published:2023 Issue:7 Volume:60 Page:0723001
ISSN:1006-4125
Container-title:Laser & Optoelectronics Progress
language:en
Short-container-title:激光与光电子学进展

Author:

Zhang Aoxiang 张傲翔,Zhang Pengfei 张鹏飞,Jia Liya 贾李亚,Sharif Muhammad Nawaz Muhammad Nawaz Sharif,Wang Fang 王芳,Liu Yuhuai 刘玉怀

Publisher

Shanghai Institute of Optics and Fine Mechanics

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Reference45 articles.

1. The emergence and prospects of deep-ultraviolet light-emitting diode technologies;J Han;Nature Photonics,2019

2. Status and future of high-power light-emitting diodes for solid-state lighting;M R Krames;Journal of Display Technology,2007

3. Light-emitting diodes: their potential in biomedical applications;T C Cheng;Renewable and Sustainable Energy Reviews,2010

4. Manipulation of Si doping concentration for modification of the electric field and carrier injection for AlGaN-based deep-ultraviolet light-emitting diodes;K K Tian;Crystals,2018

5. Application of ultraviolet light-emitting diodes (UV-LEDs) for water disinfection: a review;M Mohseni;Water Research,2016

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