Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification-Reference-Cited by-同舟云学术

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Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification

Published:2018-06-07 Issue:6 Volume:8 Page:244
ISSN:2073-4352
Container-title:Crystals
language:en
Short-container-title:Crystals

Author:

Ide Tomoro,Harada Hirofumi,Miyamura Yoshiji,Imai Masato,Nakano Satoshi,Kakimoto Koichi

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Link

http://www.mdpi.com/2073-4352/8/6/244/pdf

Reference21 articles.

1. Deformation behavior of silicon

2. In situX-ray topographic study of the dislocation mobility in high-purity and impurity-doped silicon crystals

3. On the locking of dislocations by oxygen in silicon

4. On the dislocation oxygen interactions in Czochralski-grown Si: oxygen diffusion and binding at low temperatures

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