Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization-Reference-Cited by-同舟云学术

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Dislocation Propagation in Si 300 mm Wafer during High Thermal Budget Process and Its Optimization

Published:2020-09 Issue: Volume: Page:
ISSN:
Container-title:2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Sato Ryohei,Kakimoto Koichi,Saito Wataru,Nishizawa Shin-ichi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9163811/9170028/09170035.pdf?arnumber=9170035

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on stress in trench structures during silicon IGBTs process-oxidation;Japanese Journal of Applied Physics;2024-02-14

2. The Study of Dislocation Propagation in Si Wafer during IGBT High Thermal Budget Process;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

3. Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors;IEEE Transactions on Semiconductor Manufacturing;2022-11

4. Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals;Journal of Crystal Growth;2021-09

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