Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation-Reference-Cited by-同舟云学术

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Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation

Published:2021-10-29 Issue: Volume: Page:199-223
ISSN:
Container-title:Wide Bandgap Semiconductors for Power Electronics
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Author:

Nguyen Binh Duong,Sandfeld Stefan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/9783527824724.ch8

Reference57 articles.

1. Growth of silicon crystals free from dislocations;Dash W.C.;J. Appl. Phys.,1959

2. Low dislocation density Si‐doped GaAs single crystal grown by the vapor‐pressure‐controlled Czochralski method;Hashio K.;J. Cryst. Growth,1997

3. Dislocation cell structures in melt‐grown semiconductor compound crystals;Rudolph P.;Cryst. Res. Technol.,2005

4. Dislocation patterning and bunching in crystals and epitaxial layers‐a review;Rudolph P.;Cryst. Res. Technol.,2017

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