Composition and luminescence of Si and SiO<SUB align="right">2 layers co-implanted with Ga and N ions-Reference-Cited by-同舟云学术

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Composition and luminescence of Si and SiO_{2 layers co-implanted with Ga and N ions}

Published:2017 Issue:7/8 Volume:14 Page:637
ISSN:1475-7435
Container-title:International Journal of Nanotechnology
language:en
Short-container-title:IJNT

Author:

Korolev D.S.,Mikhaylov A.N.,Belov A.I.,Konakov A.A.,Vasiliev V.K.,Nikolitchev D.E.,Surodin S.I.,Tetelbaum D.I.,Kumar Mahesh

Publisher

Inderscience Publishers

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Bioengineering

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaN nanocrystals obtained by Ga and N implantations and thermal treatment under N2 into SiO2/Si and SiNx/Si wafers;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-12

2. Gallium nitride nanocrystal formation in Si3N4 matrix by ion synthesis;Bulletin of Materials Science;2020-08-20

3. Sequential nitrogen ion implantation in Si-based GaAs matrix and subsequent thermal annealing process: electrical characterization;Proceedings of the Indian National Science Academy;2019-01-12

4. Formation of hexagonal silicon regions in silicon;Journal of Physics: Conference Series;2018-12

5. Formation of hexagonal 9R silicon polytype by ion implantation;Technical Physics Letters;2017-08

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