Formation of hexagonal 9R silicon polytype by ion implantation-Reference-Cited by-同舟云学术

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Formation of hexagonal 9R silicon polytype by ion implantation

Published:2017-08 Issue:8 Volume:43 Page:767-769
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Korolev D. S.,Nikolskaya A. A.,Krivulin N. O.,Belov A. I.,Mikhaylov A. N.,Pavlov D. A.,Tetelbaum D. I.,Sobolev N. A.,Kumar M.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/article/10.1134/S1063785017080211/fulltext.html

Reference15 articles.

1. C. Rödl, T. Sander, F. Bechstedt, et al., Phys. Rev. B 92, 045207 (2015).

2. C. Raffy, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 66, 075201 (2002).

3. J. Bandet, B. Despax, and M. Caumont, J. Phys. D: Appl. Phys. 35, 234 (2002).

4. R. H. Wentorf and J. S. Kasper, Science 139, 338 (1963).

5. Y. Zhang, Z. Iqbal, S. Vijayalakshmi, and H. Grebel, Appl. Phys. Lett. 75, 2758 (1999).

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3. Formation of Hexagonal Phase 9R-Si in SiO$${}_{\mathbf{2}}$$/Si System upon Kr$${}^{\mathbf{+}}$$ Ion Implantation;Moscow University Physics Bulletin;2023-06

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