Minority carrier lifetime in indium doped silicon for photovoltaics-Reference-Cited by-同舟云学术

Minority carrier lifetime in indium doped silicon for photovoltaics

Published:2019-08-06 Issue:10 Volume:27 Page:844-855
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog Photovolt Res Appl

Author:

Murphy John D.¹^ORCID,Pointon Alex I.¹,Grant Nicholas E.¹,Shah Vishal A.¹,Myronov Maksym²^ORCID,Voronkov Vladimir V.³,Falster Robert J.¹

Affiliation:

1. School of EngineeringUniversity of Warwick Coventry CV4 7AL UK

2. Department of PhysicsUniversity of Warwick Coventry CV4 7AL UK

3. GlobalWafers via Nazionale 59 39012 Merano Italy

Funder

Engineering and Physical Sciences Research Council

Royal Society

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.3172

Reference51 articles.

1. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

2. Low Oxygen Content Czochralski Silicon Crystal Growth

3. NeoGrowth silicon: A new high purity, low-oxygen crystal growth technique for photovoltaic substrates

4. Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon

5. Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

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