Modeling the Point-Spread Function in Helium-Ion Lithography
Author:
Affiliation:
1. Massachusetts Institute of Technology; Cambridge; Massachusetts
2. National Institute of Standards and Technology; Gaithersburg; Maryland
Publisher
Wiley
Subject
Instrumentation,Atomic and Molecular Physics, and Optics
Reference33 articles.
1. Spatial resolution limit for focused ion-beam lithography from secondary-electron energy measurements;Ando;J Vac Sci Technol B,1988
2. Precision cutting and patterning of graphene with helium ions;Bell;Nanotechnology,2009
3. Proximity effect in electron-beam lithography;Chang;J Vac Sci Technol,1975
4. Density functional theory applied to the calculation of dielectric constant of low-k materials;Courtot-Descharles;Microelectron Reliab,1999
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