DC Characteristics of MOS Structures and Hopping Currents in Thermally Grown SiO2 Films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference27 articles.
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5. Properties of Si[sub x]O[sub y]N[sub z] Films on Si
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Charge injection into SiO2 films at fields between 1 and 3 MV cm−1 after electrical stress;Physica Status Solidi (a);1988-12-16
2. Nucleation, growth and characterization of thin solid films;Progress in Crystal Growth and Characterization;1987-01
3. Trap Induction and Breakdown Mechanism in SiO2 Films;physica status solidi (a);1985-05-16
4. Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline Silicon;Physica Status Solidi (a);1984-10-16
5. Temperature dependence of currents in thin films of silicon oxide;Physica Status Solidi (a);1984-05-16
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