Temperature dependence of currents in thin films of silicon oxide-Reference-Cited by-同舟云学术

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Temperature dependence of currents in thin films of silicon oxide

Published:1984-05-16 Issue:1 Volume:83 Page:K69-K71
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Brazis R.,Pipinys P.,Rimeika A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. DC Characteristics of MOS Structures and Hopping Currents in Thermally Grown SiO2 Films

2. Poole-Frenkel Currents in Thermally Grown SiO2 Films

3. Electronic conduction mechanisms of Cs- and B-implanted SiO2-films

4. DC current-voltage behaviour of SiO2 layers

5. The conduction process in pyrolytically deposited SiO2 films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. DC conduction in polymers under high electric fields;Journal of Physics D: Applied Physics;2004-02-24

2. Electron transport in Ta2O5 films;Journal of Materials Science Letters;1990-03

3. Nucleation, growth and characterization of thin solid films;Progress in Crystal Growth and Characterization;1987-01

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