Trap Induction and Breakdown Mechanism in SiO2 Films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Dielectric Breakdown in Silicon Dioxide Films on Silicon
2. Dielectric breakdown in electrically stressed thin films of thermal SiO2
3. Silicon Oxidation Studies: Some Aspects of the Initial Oxidation Regime
4. Dielectric Breakdown of Silicon Dioxide Thin Film Capacitors Using Polycrystalline Silicon and Aluminum Electrodes
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1. High-Frequency Capacitor with Working Substance "Insulator-Undoped Silicon-Insulator";Devices and Methods of Measurements;2022-12-21
2. New Results of Degradation Effects in SiO2 Films;Physica Status Solidi (a);1991-03-16
3. Degradation and Breakdown of Gate Oxides in VLSI Devices;Physica Status Solidi (a);1989-02-16
4. Charge injection into SiO2 films at fields between 1 and 3 MV cm−1 after electrical stress;Physica Status Solidi (a);1988-12-16
5. High-Field Positive-Charge Generation and its Relation to Breakdown in a-SiO2;The Physics and Technology of Amorphous SiO2;1988
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