Simulation of the Influence of Mechanical Stresses on the Kinetics of Crystallization of Ion-Implanted Silicon Layers under Pulse Heating

Author:

Aleksandrov L. N.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Shock crystallization of films

2. The effect of implantation on explosively crystallizeda‐Si

3. and , in: Ion Implantation, Proc. 2nd Soviet-American Symp., Pushkino (USSR) 1979, Inst. Semiconductor Phys, Novosibirsk 1979 (p. 151).

4. Effect of irradiation particle mass on crystallization of amorphous alloys

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