Defect production in Si by ion bombardment under the influence of internal mechanical strain-Reference-Cited by-同舟云学术

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Defect production in Si by ion bombardment under the influence of internal mechanical strain

Published:1996-07 Issue:1-4 Volume:115 Page:557-560
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Suprun-Belevich Yu.,Palmetshofer L.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference17 articles.

1. Stresses in silicon crystals from ion-implanted amorphous regions

2. Strain in GaAs by low‐dose ion implantation

3. Distribution of strain in Ge ion implanted silicon measured by high resolution X-ray diffraction

4. Simulation of the Influence of Mechanical Stresses on the Kinetics of Crystallization of Ion-Implanted Silicon Layers under Pulse Heating

5. Characterization of SiGe/Si heterostructures formed by Ge+and C+implantation

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of mechanical strain and extended defects in annealed (100) silicon samples implanted with Ge+ ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-04

2. Behaviour of radiation defects under the influence of mechanical strain in ion-implanted silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1997-05

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