Current Dependent Electroluminescence Decay and Degradation Behaviour in Green and Yellow LED's-Reference-Cited by-同舟云学术

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Current Dependent Electroluminescence Decay and Degradation Behaviour in Green and Yellow LED's

Published:1982-08-16 Issue:2 Volume:72 Page:687-694
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Blaschke M.,Grundmann H. J.,Wandel K.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Degradation induced formation of extended defects in GaP:N LED's

2. and , private communication.

3. Minority carrier lifetime in VPE-GaP:N, Te at various excitation levels

4. and , Acta phys. Hungar. (1982), to be published.

5. , and , phys. stat. sol. (a), to be published.

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Deep levels and processes in the course of degradation of GaP:N LED's;physica status solidi (a);1986-09-16

2. Experimental Investigations on the Influence of Surface and Interface Recombination on the Minority Carrier Lifetime in LPE-GaP :N, Si VPE-GaP:N, Te, and VPE-GaAs0.12P0.88:N, Te;physica status solidi (a);1986-08-16

3. Minority Carrier Lifetime Measurements by Photoluminescence at Room Temperature in GaAs1−x, Px:N, Te (x ≥ 0.70);Physica Status Solidi (a);1984-02-16

4. On the degradation of electroluminescence efficiency in gallium phosphide green light emitting diodes;Physica Status Solidi (a);1983-11-16

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