Degradation induced formation of extended defects in GaP:N LED's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31826/01481510.pdf?arnumber=1481510
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Degradation of commercial high-brightness GaP:N green light emitting diodes;Journal of Applied Physics;1998-06-15
2. Characteristics of electron traps in In0.5Ga0.5P generated by recombination enhanced defect reactions;Applied Physics Letters;1993-09-06
3. Defects in GaP green light-emitting diodes;Physica Status Solidi (a);1988-10-16
4. Selective detection of deep recombinative centers;Solid-State Electronics;1986-09
5. On the reliability of minority carrier injection DLTS spectra;physica status solidi (a);1986-04-16
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