Author:
Sobeslavsky E.,Jäger H. U.,Kreissig U.,Skorupa W.,Wollschläger K.
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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1. Precipitation studies in oxygen- and nitrogen-rich silicon formed by high dose implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1994-02
2. Modelling of the formation of buried dielectric layers by ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03
3. Peculiarities in the Modeling of High Dose Implantation of Nitrogen on Silicon Targets;physica status solidi (a);1990-11-16
4. Dynamic monte carlo simulation of high dose effects during ion bombardment;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1989-09
5. Modeling of Nitrogen High Dose Implantation into Silicon in the Energy Range of 150 to 330 keV;Physica Status Solidi (a);1989-07-16