Formation mechanisms and structures of insulating compounds formed in silicon by ion beam synthesis-Reference-Cited by-同舟云学术

Formation mechanisms and structures of insulating compounds formed in silicon by ion beam synthesis

Published:1986-09 Issue:1-4 Volume:99 Page:71-81
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Reeson K. J.,Hemment P. L. F.,Peart R. F.,Meekison C. D.,Marsh C.,Booker G. R.,Chater R. J.,Iulner J. A.,Davis J.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337578608209614

Reference27 articles.

1. Formation of SiO2Films by Oxygen-Ion Bombardment

2. Freeman, J. H., Card, G. A., Mazey, D. J., Stephen, J. H. and Whiting, F. B. 1970. Europeun Conference on Ion Implantation. 1970, Reading. Peregrinus, Herts

3. The structure of silicon carbide synthesized in diamond and silicon by ion implantation

4. The dielectric breakdown properties and I–V characteristics of thin SiO2 films formed by high dose oxygen ion implantation into silicon

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1. Formation of SiC Thin Films by Ion Beam Synthesis;Silicon Carbide;2004

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3. Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions;Surface Science;1999-04

4. Formation of silicon nitride layers by nitrogen implantation into Si/CoSi2 systems;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-03

5. Depth profile analysis of two element mixtures by rutherford backscattering spectrometry;Radiation Effects and Defects in Solids;1990-05