The dielectric breakdown properties and I–V characteristics of thin SiO2 films formed by high dose oxygen ion implantation into silicon-Reference-Cited by-同舟云学术

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The dielectric breakdown properties and I–V characteristics of thin SiO2 films formed by high dose oxygen ion implantation into silicon

Published:1977-04 Issue:2 Volume:42 Page:227-235
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Dylewski J.,Joshi M.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Ion Beams with Applications to Ion Implantation;Wilson,1973

2. Formation of SiO2Films by Oxygen-Ion Bombardment

3. European Conf. on Ion Implantation;Freeman,1970

4. Int. Conf. on Applications of Ion Beams to Semiconductor Technology;Blamires,1967

5. Ion Implantation in Semiconductors;Borders,1971

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2. Observation of Enhanced Dielectric Coupling and Room-Temperature Ferromagnetism in Chemically Synthesized BiFeO3@SiO2 Core–Shell Particles;The Journal of Physical Chemistry C;2012-09-04

3. History of SIMOX Material;MRS Bulletin;1998-12

4. XRD, ESCA and C–V investigations of Al2O3 SiO2 composite thin films synthesized by high dose oxygen ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1998-10

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