Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution-Reference-Cited by-同舟云学术

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Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution

Published:1975-02-16 Issue:2 Volume:27 Page:673-678
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Bolkhovityanov Yu. B.,Bolkhovityanova R. I.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. , , and , Proc. 2nd Internat. Symp. GaAs, Inst. Phys., London 1969 (p. 22).

2. and , Proc. 2nd Internat. Symp. GaAs, Inst, Phys., London 1969 (p. 18)

3. Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer

4. The growth of gallium arsenide films from a thin solution layer between substrates

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of atomic diffusion in the III-V semiconductors;Journal of Physics D: Applied Physics;1985-04-14

2. Doping behaviour of te in Ga1−xInxAs liquid phase epitaxial layers;Physica Status Solidi (a);1980-10-16

3. Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy;Solid-State Electronics;1980-08

4. Diffusion of tin in n-type GaAs;Journal of Physics D: Applied Physics;1978-12-21

5. Alloying of solid solutions during liquid-phase epitaxy;Soviet Physics Journal;1977-07

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