The growth of gallium arsenide films from a thin solution layer between substrates-Reference-Cited by-同舟云学术

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The growth of gallium arsenide films from a thin solution layer between substrates

Published:1973 Issue:10 Volume:8 Page:1103-1112
ISSN:0023-4753
Container-title:Kristall und Technik
language:de
Short-container-title:Krist. Techn.

Author:

Bolchovitianov Yu. B.,Bolchovitianova R. I.,Melnikov P. L.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry,Pharmacology (medical),Complementary and alternative medicine,Pharmaceutical Science

Reference13 articles.

1. , , ; Electronnaya Technika, USSR, scr. 2, No I, 129 (1972)

2. : Conduction of Heat in Solids, Moscow 1964

3. A new technique for liquid phase epitaxy

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonequilibrium deep-center trapping in liquid epitaxy on gallium arsenide;Soviet Physics Journal;1983-10

2. The influence of indium on the pn junction formation in Sidoped LPE layers of gallium arsenide;Physica Status Solidi (a);1976-10-16

3. Study of doping of InxGa1−xAs films with germanium;Physica Status Solidi (a);1975-09-16

4. Growth of AlxGa1?xAs films of controllable thickness from a thin layer of molten solution;Soviet Physics Journal;1975-08

5. Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution;Physica Status Solidi (a);1975-02-16

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