Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer-Reference-Cited by-同舟云学术

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Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer

Published:1974-03-16 Issue:1 Volume:22 Page:349-355
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Bolkhovityanov Yu. B.,Bolkhovityanova R. I.,Zembatov N. B.,Marchenko N. E.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. and , Pat. USA No. 3533856. 13, 9. 1970.

2. The growth of gallium arsenide films from a thin solution layer between substrates

3. , , and , Elektronnaya Tekh. Ser. 2, No. 1, 129 (1972).

4. Phase diagram, crystal growth, and band structure of InxGa1-xAs

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doping behaviour of te in Ga1−xInxAs liquid phase epitaxial layers;Physica Status Solidi (a);1980-10-16

2. Transition regions in epitaxial films;Physica Status Solidi (a);1977-11-16

3. Epitaxy;Semiconducting Devices;1976

4. Properties of Liquid Phase Epitaxial GaAs Grown from Tin Solution;Physica Status Solidi (a);1975-12-16

5. Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution;Physica Status Solidi (a);1975-02-16

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