Current and capacitance transient responses of MOS capacitor. II. Recombination centers in the surface space charge layer
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference9 articles.
1. Current and capacitance transient responses of MOS capacitor. I. General theory and applications to initially depleted surface without surface states
2. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments
3. and , to be published.
4. Electrical properties of tin diselenide under pressure
5. and , to be published.
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1. A multipoint correlation method for bulk trap and interface state measurements in MOS structures from capacitance, voltage, and current transients;Review of Scientific Instruments;1991-08
2. Current deep‐level transient spectroscopy in MOS structures with a boxcar integrator and an arbitrary gate‐width‐data analysis;Review of Scientific Instruments;1991-04
3. Temperature formation of the inversion layer in metal‐oxide‐semiconductor structures: Theoretical model and application to the determination of minority‐capture cross sections of the gold acceptor level in silicon;Journal of Applied Physics;1989-12-15
4. Thermal emission and capture rates of holes at the gold donor level in silicon;Journal of Applied Physics;1987-12-15
5. Process-induced and gold acceptor defects in silicon;Physical Review B;1987-11-15
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